Multi-terminal integrated passive devices embedded on die and a method for fabricating the multi-terminal integrated passive devices

A method for fabricating integrated passive devices (IPDs) on a die embedded in an integrated circuit package (IC), comprising:

• forming through substrate vias (TSVs) through a die substrate and coupled to an active layer on the die substrate and extending to a backside surface of the die;
• forming pads on the backside surface of the die physically contacted to exposed portions of the TSVs;
• attaching terminals of a plurality of IPDs to physically contact an exposed surface of the pads on the backside surface of the die and coupled to the active layer through the TSVs;
• forming a metallization structure on back-end-of-line (BEOL) layers on the active layer of the die;
• and
• forming an under bump metallization layer on the metallization structure to support package bumps.

An integrated circuit (IC) package, comprising:

• a die, including an active layer on a substrate and through substrate vias (TSVs) coupled to the active layer and through the substrate to a backside surface of the die;
• a plurality of integrated passive devices (IPDs) on the backside surface of the die and coupled to the active layer through the TSVs, in which the die comprises pads on the backside surface of the die physically contacting the TSVs and terminals of the plurality of IPDs;
• back-end-of-line (BEOL) layers on the active layer;
• means for routing on the BEOL layers;
• an under bump metallization layer on the routing means;
• and
• a plurality of package bumps on the first under bump metallization layer.