Method and apparatus for producing structure, and light irradiation apparatus
AssigneesSciocs Company Limited, Sumitomo Chemical Company, Limited
InventorsFumimasa HORIKIRI, Noboru FUKUHARA
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AssigneesSciocs Company Limited, Sumitomo Chemical Company, Limited
InventorsFumimasa HORIKIRI, Noboru FUKUHARA
Estimating the term…
There is provided a structure manufacturing method, including: preparing a wafer at least whose surface comprises Group III nitride crystal in a state of being immersed in an etching solution containing peroxodisulfate ions; and irradiating the surface of the wafer with light through the etching solution; wherein the group III nitride crystal has a composition in which a wavelength corresponding to a band gap is 310 nm or more, and during irradiation of the light, the surface of the wafer is irradiated with a first light having a wavelength of 200 nm or more and less than 310 nm under a first irradiation condition, and is irradiated with a second light having a wavelength of 310 nm or more and less than a wavelength corresponding to the band gap under a second irradiation condition controlled independently of the first irradiation condition.
A structure manufacturing method, comprising:
A structure manufacturing device, comprising:
A light irradiation device, used to irradiate a surface of a wafer with light, the wafer being immersed in an etching solution containing peroxodisulfate ions, and at least whose surface comprises Group III nitride crystal,
20-21. (canceled)
Dependencies are inferred from the claim text.