Memory Arrays And Methods Used In Forming A Memory Array Comprising Strings Of Memory Cells

A memory array comprising:

• a vertical stack comprising alternating insulative tiers and conductive tiers,
• a first insulator tier above the stack, first insulator material of the first insulator tier comprising at least one of (a) and (b), where (a):
• silicon, nitrogen, and one or more of carbon, oxygen, boron, and phosphorus, and (b):
• silicon carbide;
• channel-material strings of memory cells in the stack, channel material of the channel-material strings being in the first insulator tier;
• conducting material in the first insulator tier directly against sides of individual of the channel-material strings;
• a second insulator tier above the first insulator tier and the conducting material, second insulator material of the second insulator tier comprising at least one of the (a) and the (b);
• and
• conductive vias extending through the second insulator tier that are individually directly electrically coupled to the individual channel-material strings through the conducting material;
• and
• the first and second insulator materials being of different compositions relative one another.

A memory array comprising:

• a vertical stack comprising alternating insulative tiers and conductive tiers,
• a first insulator tier above the stack, first insulator material of the first insulator tier comprising at least one of (a) and (b), where (a):
• silicon, nitrogen, and one or more of carbon, oxygen, boron, and phosphorus, and (b):
• silicon carbide;
• channel-material strings of memory cells in the stack, channel material of the channel-material strings being in the first insulator tier;
• conducting material in the first insulator tier directly against sides of individual of the channel-material strings;
• a second insulator tier above the first insulator tier and the conducting material, second insulator material of the second insulator tier comprising at least one of the (a) and the (b);
• and
• conductive vias extending through the second insulator tier that are individually directly electrically coupled to the individual channel-material strings through the conducting material;
• and
• the conducting material projecting upwardly from the first insulator material.

A memory array comprising:

• a vertical stack comprising alternating insulative tiers and conductive tiers,
• a first insulator tier above the stack, first insulator material of the first insulator tier comprising at least one of (a) and (b), where (a):
• silicon, nitrogen, and one or more of carbon, oxygen, boron, and phosphorus, and (b):
• silicon carbide;
• channel-material strings of memory cells in the stack, channel material of the channel-material strings being in the first insulator tier;
• conducting material in the first insulator tier directly against sides of individual of the channel-material strings;
• a second insulator tier above the first insulator tier and the conducting material, second insulator material of the second insulator tier comprising at least one of the (a) and the (b);
• and
• conductive vias extending through the second insulator tier that are individually directly electrically coupled to the individual channel-material strings through the conducting material;
• the at least one of the first insulator material comprising the (a);
• and
• said one or more of carbon, oxygen, boron, and phosphorus in the first insulator material having a total concentration of at least about 2 atomic percent

A memory array comprising:

• a vertical stack comprising alternating insulative tiers and conductive tiers,
• a first insulator tier above the stack, first insulator material of the first insulator tier comprising at least one of (a) and (b), where (a):
• silicon, nitrogen, and one or more of carbon, oxygen, boron, and phosphorus, and (b):
• silicon carbide;
• channel-material strings of memory cells in the stack, channel material of the channel-material strings being in the first insulator tier;
• conducting material in the first insulator tier directly against sides of individual of the channel-material strings;
• a second insulator tier above the first insulator tier and the conducting material, second insulator material of the second insulator tier comprising at least one of the (a) and the (b);
• and
• conductive vias extending through the second insulator tier that are individually directly electrically coupled to the individual channel-material strings through the conducting material;
• the at least one of the first insulator material comprising the (a);
• and
• the one or more of the first insulator material comprises carbon.

A memory array comprising:

• a vertical stack comprising alternating insulative tiers and conductive tiers,
• a first insulator tier above the stack, first insulator material of the first insulator tier comprising at least one of (a) and (b), where (a):
• silicon, nitrogen, and one or more of carbon, oxygen, boron, and phosphorus, and (b):
• silicon carbide;
• channel-material strings of memory cells in the stack, channel material of the channel-material strings being in the first insulator tier;
• conducting material in the first insulator tier directly against sides of individual of the channel-material strings;
• a second insulator tier above the first insulator tier and the conducting material, second insulator material of the second insulator tier comprising at least one of the (a) and the (b);
• and
• conductive vias extending through the second insulator tier that are individually directly electrically coupled to the individual channel-material strings through the conducting material;
• the at least one of the first insulator material comprising the (a);
• and
• the one or more of the first insulator material comprises boron.

A memory array comprising:

• a vertical stack comprising alternating insulative tiers and conductive tiers,
• a first insulator tier above the stack, first insulator material of the first insulator tier comprising at least one of (a) and (b), where (a):
• silicon, nitrogen, and one or more of carbon, oxygen, boron, and phosphorus, and (b):
• silicon carbide;
• channel-material strings of memory cells in the stack, channel material of the channel-material strings being in the first insulator tier;
• conducting material in the first insulator tier directly against sides of individual of the channel-material strings;
• a second insulator tier above the first insulator tier and the conducting material, second insulator material of the second insulator tier comprising at least one of the (a) and the (b);
• and
• conductive vias extending through the second insulator tier that are individually directly electrically coupled to the individual channel-material strings through the conducting material;
• the at least one of the first insulator material comprising the (a);
• and
• the one or more of the first insulator material comprises phosphorus.

A memory array comprising:

• a vertical stack comprising alternating insulative tiers and conductive tiers,
• a first insulator tier above the stack, first insulator material of the first insulator tier comprising at least one of (a) and (b), where (a):
• silicon, nitrogen, and one or more of carbon, oxygen, boron, and phosphorus, and (b):
• silicon carbide;
• channel-material strings of memory cells in the stack, channel material of the channel-material strings being in the first insulator tier;
• conducting material in the first insulator tier directly against sides of individual of the channel-material strings;
• a second insulator tier above the first insulator tier and the conducting material, second insulator material of the second insulator tier comprising at least one of the (a) and the (b);
• and
• conductive vias extending through the second insulator tier that are individually directly electrically coupled to the individual channel-material strings through the conducting material;
• the at least one of the first insulator material comprising the (a);
• and
• the one or more of the first insulator material comprises at least two of carbon, oxygen, boron, and phosphorus.

A memory array comprising:

• a vertical stack comprising alternating insulative tiers and conductive tiers,
• a first insulator tier above the stack, first insulator material of the first insulator tier comprising at least one of (a) and (b), where (a):
• silicon, nitrogen, and one or more of carbon, oxygen, boron, and phosphorus, and (b):
• silicon carbide;
• channel-material strings of memory cells in the stack, channel material of the channel-material strings being in the first insulator tier;
• conducting material in the first insulator tier directly against sides of individual of the channel-material strings;
• a second insulator tier above the first insulator tier and the conducting material, second insulator material of the second insulator tier comprising at least one of the (a) and the (b);
• and
• conductive vias extending through the second insulator tier that are individually directly electrically coupled to the individual channel-material strings through the conducting material;
• and
• the at least one of the first insulator material comprises the (b).

A memory array comprising:

• a vertical stack comprising alternating insulative tiers and conductive tiers,
• a first insulator tier above the stack, first insulator material of the first insulator tier comprising at least one of (a) and (b), where (a):
• silicon, nitrogen, and one or more of carbon, oxygen, boron, and phosphorus, and (b):
• silicon carbide;
• channel-material strings of memory cells in the stack, channel material of the channel-material strings being in the first insulator tier;
• conducting material in the first insulator tier directly against sides of individual of the channel-material strings;
• a second insulator tier above the first insulator tier and the conducting material, second insulator material of the second insulator tier comprising at least one of the (a) and the (b);
• and
• conductive vias extending through the second insulator tier that are individually directly electrically coupled to the individual channel-material strings through the conducting material;
• and
• the at least one of the first insulator material comprises both the (a) and the (b).

A memory array comprising:

• a vertical stack comprising alternating insulative tiers and conductive tiers,
• a first insulator tier above the stack, first insulator material of the first insulator tier comprising at least one of (a) and (b), where (a):
• silicon, nitrogen, and one or more of carbon, oxygen, boron, and phosphorus, and (b):
• silicon carbide;
• channel-material strings of memory cells in the stack, channel material of the channel-material strings being in the first insulator tier;
• conducting material in the first insulator tier directly against sides of individual of the channel-material strings;
• a second insulator tier above the first insulator tier and the conducting material, second insulator material of the second insulator tier comprising at least one of the (a) and the (b);
• and
• conductive vias extending through the second insulator tier that are individually directly electrically coupled to the individual channel-material strings through the conducting material;
• and
• the at least one of the second insulator material comprises the (b).