Semiconductor structure and method for manufacturing same
OwnerChung Yen Chouinventor
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Abstract
A semiconductor structure and a method for manufacturing the same are provided. The manufacturing method includes: providing a semiconductor substrate having trench isolation layers and a plurality of active areas; removing a preset thickness of the trench isolation layers to form a plurality of openings which expose the upper parts of the active areas; forming additional layers on side walls of the exposed upper parts of the active areas; and forming filling isolation layers in the openings to fill the openings, the filling isolation layers and the retained trench isolation layers together constituting first shallow trench isolation structures.
Claims14
A method for manufacturing a semiconductor structure, comprising:
- providing a semiconductor substrate, a plurality of active areas and trench isolation layers being provided in the semiconductor substrate;
- removing a part of each of the trench isolation layers to form a plurality of openings with a preset depth, the openings exposing upper parts of the active areas;
- forming additional layers on side walls of the exposed upper parts of the active areas;
- and
- forming filling isolation layers in the openings to fill the openings, the filling isolation layers and the remaining trench isolation layers together constituting first shallow trench isolation structures.
A semiconductor structure, comprising:
- a semiconductor substrate in which a plurality of first shallow trench isolation structures and a plurality of active areas are provided;
- and
- additional layers coating on side walls of upper parts of the active areas.
Dependencies are inferred from the claim text.