Method for making semiconductor substrate and method for making semiconductor device
OwnerJuiping LI, Bohsiang TSENG +3inventors
InventorsJuiping LI, Bohsiang TSENG, Jiahao ZHANG, Zengwei LIU, Mingxin CHEN
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Abstract
A method for making a semiconductor substrate includes: cutting an ingot to obtain a plurality of substrates, each of the substrates including a first surface and a second surface opposite to the first surface; performing a surface treatment on at least one of the first surface and the second surface of each of the substrates using a surface-treating agent; annealing the substrates; and abrasing each of the annealed substrates. A method for making a semiconductor device is also disclosed.
Claims20
A method for making a semiconductor substrate, comprising:
- cutting an ingot to obtain a plurality of substrates, each of the substrates including a first surface and a second surface opposite to the first surface;
- performing a surface treatment on at least one of the first surface and the second surface of each of the substrates using a surface-treating agent;
- annealing the substrates so that the substrates react with the surface-treating agent to obtain annealed substrates, each of the annealed substrates having a base and a modified layer formed by a reaction between a corresponding one of the substrates and the surface-treating agent;
- and
- abrasing each of the annealed substrates to remove at least a part of the modified layer.
A method for making a semiconductor device, comprising the steps of:
- a) providing a semiconductor substrate which is processed by the sub-steps of:
- a1) cutting an ingot to obtain a plurality of substrates, each of the substrates including a first surface and a second surface opposite to the first surface,
- a2) performing a surface treatment on at least one of the first surface and the second surface of each of the substrates using a surface-treating agent,
- a3) annealing the substrates so that the substrates react with the surface-treating agent to obtain annealed substrates, each of the annealed substrates having a base and a modified layer formed by a reaction between a corresponding one of the substrates and the surface-treating agent, and
- a4) abrasing each of the annealed substrates to remove at least a part of the modified layer;
- b) forming at least one semiconductor layer on the semiconductor substrate;
- and
- c) etching the at least one semiconductor layer.
Dependencies are inferred from the claim text.