Methods for forming a rhenium-containing film on a substrate by a cyclical deposition process and related semiconductor device structures
AssigneeASM IP Holding B.V.
InventorVarun Sharma
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Abstract
Methods for forming a rhenium-containing film on a substrate by a cyclical deposition are disclosed. The method may include: contacting the substrate with a first vapor phase reactant comprising a rhenium precursor; and contacting the substrate with a second vapor phase reactant. Semiconductor device structures including a rhenium-containing film formed by the methods of the disclosure are also disclosed.
Claims20
A method for forming a rhenium-containing film on a substrate by a cyclical deposition process, the method comprising:
- contacting the substrate with a first vapor phase reactant comprising a rhenium oxyhalide precursor, an alkyl rhenium oxide precursor, a cyclopentadienyl based rhenium precursor, or a rhenium carbonyl halide precursor;
- and
- contacting the substrate with a second vapor phase reactant,
- wherein the rhenium-containing film comprises boron, sulfur, carbon, nitrogen, phosphorus, or a combination thereof.
A method for forming a rhenium-containing film on a substrate by a cyclical deposition process, the method comprising:
- contacting the substrate with a first vapor phase reactant comprising a rhenium oxyhalide precursor, an alkyl rhenium oxide precursor, a cyclopentadienyl based rhenium precursor, or a rhenium carbonyl halide precursor;
- and
- contacting the substrate with a second vapor phase reactant,
- wherein the rhenium-containing film comprises at least one of a rhenium boride film, a rhenium sulfide film, a rhenium nitride film, rhenium phosphide film, and an elemental rhenium film.
Dependencies are inferred from the claim text.