Molecular layer deposition method and system

A processing method comprising:

• flowing a first deposition precursor into a substrate processing region, wherein the first deposition precursor has a first formula comprising:
• Y1—R1—Y2,
• wherein R1 comprises one or more of an alkyl group, an aromatic group, or a cycloalkyl group, and
• Y1 and Y2 independently comprise a hydroxide group, an aldehyde group, a ketone group, an acid group, an amino group, an isocyanate group, a thiocyanate group, or an acyl chloride group, and
• wherein the first deposition precursor reacts with a reactive group on a surface of a substrate in the substrate processing region to form a first portion of an initial compound layer on the surface of the substrate;
• removing a first deposition effluent comprising the first deposition precursor from the substrate processing region;
• flowing a second deposition precursor into the substrate processing region, wherein the second deposition precursor has a second formula comprising:
• Z1—R2—Z2,
• wherein R2 comprises one or more of an alkyl group, an aromatic group, or a cycloalkyl group, and
• Z1 and Z2 independently comprise a hydroxide group, an aldehyde group, a ketone group, an acid group, an amino group, an isocyanate group, a thiocyanate group, or an acyl chloride group,
• wherein the second deposition precursor reacts with the first portion of the initial compound layer to form a second portion of the initial compound layer;
• removing a second deposition effluent comprising the second deposition precursor from the substrate processing region;
• and
• annealing the initial compound layer to form an annealed carbon-containing material on the surface of the substrate.

A processing method comprising:

• performing two or more cycles of forming a carbon-containing composite layer on a substrate;
• wherein each of the two or more cycles of forming the carbon-containing composite layer comprises:
• forming a first portion of a compound layer on a surface of the substrate, wherein the first portion of the compound layer is formed by flowing a first deposition precursor into a substrate processing region, wherein the first deposition precursor reacts with a reactive group on the surface of the substrate in the substrate processing region to form the first portion of the compound layer, and
• forming a second portion of the compound layer on at least a portion of the first compound layer, wherein the second portion of the compound layer is formed by flowing a second deposition precursor into the substrate processing region, wherein the second deposition precursor reacts with the first portion of the initial compound layer to form the second portion of the compound layer;
• and
• annealing the two or more carbon-containing composite layers on the substrate to form an annealed carbon-containing material on the surface of the substrate.