Photoresist layer outgassing prevention

A method of manufacturing a semiconductor device, comprising:

• forming a photoresist layer over a substrate, comprising:
• combining a first precursor and a second precursor in a vapor state to form a photoresist material, and
• depositing the photoresist material over the substrate,
• wherein the photoresist layer has a first surface facing the substrate and an opposing second surface;
• treating the second surface of the photoresist layer to form a dehydrated film overlying the photoresist layer;
• selectively exposing the photoresist layer to actinic radiation to form a latent pattern in the photoresist layer;
• developing the latent pattern by applying a developer to the selectively exposed photoresist layer to form a pattern in the photoresist layer,
• wherein a portion of the dehydrated film remains over the photoresist layer after the developing the latent pattern.

A method for preventing outgassing of a metal-containing photoresist, comprising:

• forming a metal-containing photoresist layer over a substrate,
• wherein the metal-containing photoresist layer has a first main surface facing the substrate and an opposing second main surface;
• treating the second main surface of the photoresist layer to form a barrier film over the photoresist layer to prevent outgassing from the photoresist layer,
• wherein the treating the second main surface of the photoresist layer includes one or more of:
• heating the second main surface of the photoresist layer at a temperature ranging from 80° C. to 150° C., applying ozone to the second main surface of the photoresist layer, applying an organic solvent vapor to the second main surface of the photoresist layer, and exposing the second main surface of the photoresist layer to ultraviolet radiation;
• patternwise exposing the photoresist layer to actinic radiation to form an exposed portion and an unexposed portion of the photoresist layer;
• and
• removing the unexposed portion of the photoresist layer and a first portion of the barrier film over the unexposed portion of the photoresist layer.