US 2022/0028680 A1Published application

Multi-layer deposition and treatment of silicon nitride films

AssigneeApplied Materials, Inc.

InventorsVinayak Veer Vats, Byung Kook Ahn, SeoYoung Lee, Hang Yu

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Abstract

Exemplary processing methods may include forming a first deposition plasma of a silicon-and-nitrogen-containing precursor. The methods may include depositing a first portion of a silicon nitride material on a semiconductor substrate with the first deposition plasma. A first treatment plasma of a helium-and-nitrogen-containing precursor may be formed to treat the first portion of the silicon nitride material with the first treatment plasma. A second deposition plasma may deposit a second portion of a silicon nitride material, and a second treatment plasma may treat the second portion of the silicon nitride material. A flow rate ratio of helium-to-nitrogen in the first treatment plasma may be lower than a He/N2 flow rate ratio in the second treatment plasma. A first power level from a plasma power source that forms the first treatment plasma may be lower than a second power level that forms the second treatment plasma.

Claims20

Dependent claims

A processing method comprising:

depositing and treating a first portion of a silicon nitride material on a semiconductor substrate, wherein the first portion of the silicon nitride material is formed with a first deposition plasma and treated with a first treatment plasma;
depositing a second portion of a silicon nitride material on the first treated portion of the silicon nitride material, wherein the second portion of the silicon nitride material is deposited with a second deposition plasma formed of one or more deposition precursors comprising a silicon-containing precursor;
treating the second portion of the silicon nitride material with a second treatment plasma formed of a second treatment gas mixture comprising helium and nitrogen;
depositing a third portion of the silicon nitride material on the second treated portion of the silicon nitride material, wherein the third portion of the silicon nitride material is deposited with a third deposition plasma;
and
treating the third portion of the silicon nitride material with a third treatment plasma formed of a third treatment gas mixture comprising helium and nitrogen,
wherein a flow rate ratio of helium-to-nitrogen for the second treatment gas mixture is greater than a flow rate ratio of helium-to-nitrogen for the third treatment gas mixture.

4 more elements

A processing method comprising:

performing two or more cycles of depositing and treating silicon nitride material on a semiconductor substrate;
wherein each of the two or more cycles of depositing and treating the silicon nitride material comprises:
depositing a silicon nitride material with plasma effluents of a deposition plasma, wherein the deposition plasma is formed of one or more deposition precursors comprising a silicon-containing precursor;
and
treating the silicon nitride material with a treatment plasma, wherein the treatment plasma is formed of a treatment gas mixture comprising helium and nitrogen,
wherein a flow rate ratio of helium-to-nitrogen for the treatment gas mixture in a prior cycle of depositing and treating silicon nitride material is greater than a flow rate ratio of helium-to-nitrogen for the treatment gas mixture in a subsequent cycle of depositing and treating silicon nitride material.

3 more elements

Dependencies are inferred from the claim text.