Method of manufacturing semiconductor device, substrate processing method, substrate processing apparatus, and recording medium

A substrate processing method, comprising:

• forming a film containing Si, O, and N or a film containing Si and O on a substrate by performing a cycle a predetermined number of times, the cycle including:
• (a) forming NH termination on a surface of the substrate by supplying a first reactant containing N and H to the substrate;
• (b) forming a Si- and N-containing layer having SiCl termination formed on its surface by supplying SiCl4 as a precursor to the substrate to cause the NH termination formed on the surface of the substrate to react with the SiCl4 under a condition in which the reaction of the NH termination and the SiCl4 is self-limited;
• and
• (c) causing the Si- and N-containing layer having the SiCl termination to react with a second reactant containing O by supplying the second reactant to the substrate.

A substrate processing apparatus, comprising:

• a process chamber in which a substrate is processed;
• a first reactant supply system configured to supply a first reactant containing N and H to the substrate in the process chamber;
• a precursor supply system configured to supply SiCl4 as a precursor to the substrate in the process chamber;
• a second reactant supply system configured to supply a second reactant containing O to the substrate in the process chamber;
• a heater configured to heat the substrate in the process chamber;
• and
• a controller configured to be capable of controlling the first reactant supply system, the precursor supply system, the second reactant supply system, and the heater to perform a process in the process chamber, the process comprising:
• forming a film containing Si, O, and N or a film containing Si and O on the substrate by performing a cycle a predetermined number of times, the cycle including:
• (a) forming NH termination on a surface of the substrate by supplying the first reactant to the substrate;
• (b) forming a Si- and N-containing layer having SiCl termination formed on its surface by supplying the SiCl4 to the substrate to cause the NH termination formed on the surface of the substrate to react with the SiCl4 under a condition in which the reaction of the NH termination and the SiCl4 is self-limited;
• and
• (c) causing the Si- and N-containing layer having the SiCl termination to react with the second reactant by supplying the second reactant to the substrate.

A non-transitory computer-readable recording medium storing a program that causes, by a computer, a substrate processing apparatus to perform a process, the process comprising:

• forming a film containing Si, O, and N or a film containing Si and O on a substrate by performing a cycle a predetermined number of times, the cycle including:
• (a) forming NH termination on a surface of the substrate by supplying a first reactant containing N and H to the substrate;
• (b) forming a Si- and N-containing layer having SiCl termination formed on its surface by supplying SiCl4 as a precursor to the substrate to cause the NH termination formed on the surface of the substrate to react with the SiCl4 under a condition in which the reaction of the NH termination and the SiCl4 is self-limited;
• and
• (c) causing the Si- and N-containing layer having the SiCl termination to react with a second reactant containing O by supplying the second reactant to the substrate.