Plasma processing method and plasma processing apparatus
AssigneeTokyo Electron Limited
InventorYuya Minoura
Life of this patent
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Abstract
A plasma processing method includes carrying a substrate into a processing vessel and placing the substrate on a placing surface of a placing table within the processing vessel; performing a plasma processing on the substrate by forming plasma from a first gas within the processing vessel; forming, by forming plasma from a second gas within the processing vessel, a film covering a surface of a reaction product attached to a surface of a member within the processing vessel when the plasma processing is performed; and carrying-out the substrate on the placing surface of the placing table from the processing vessel in a state that the film is formed on the surface of the member within the processing vessel.
Claims9
A plasma processing method, comprising:
- carrying a substrate into a processing vessel and placing the substrate on a placing surface of a placing table within the processing vessel;
- performing a plasma processing on the substrate by forming plasma from a first gas within the processing vessel;
- forming, by forming plasma from a second gas within the processing vessel, a film covering a surface of a reaction product attached to a surface of a member within the processing vessel when the plasma processing is performed;
- and
- carrying-out the substrate on the placing surface of the placing table from the processing vessel in a state that the film is formed on the surface of the member within the processing vessel.
A plasma processing apparatus, comprising:
- a processing vessel which provides a processing space therein;
- a placing table, provided within the processing vessel, having a placing surface on which a substrate is placed;
- a gas supply configured to supply a processing gas into the processing vessel;
- and
- a controller,
- wherein the controller controls individual components to perform a plasma processing method comprising:
- carrying the substrate into the processing vessel and placing the substrate on the placing surface of the placing table within the processing vessel;
- performing a plasma processing on the substrate by forming plasma from a first gas within the processing vessel;
- forming, by forming plasma from a second gas within the processing vessel, a film covering a surface of a reaction product attached to a surface of a member within the processing vessel when the plasma processing is performed;
- and
- carrying-out the substrate on the placing surface of the placing table from the processing vessel in a state that the film is formed on the surface of the member within the processing vessel.
Dependencies are inferred from the claim text.