Plasma source for semiconductor processing
AssigneeApplied Materials, Inc.
InventorVladimir Nagorny
Life of this patent
Estimating the term…
Abstract
The present technology encompasses plasma sources including a first plate defining a first plurality of apertures arranged in a first set of rows. The first plate may include a first set of electrodes extending along a separate row of the first set of rows. The plasma sources may include a second plate defining a second plurality of apertures arranged in a second set of rows. The second plate may include a second set of electrodes extending along a separate row of the second set of rows. Each aperture of the second plurality of apertures may be axially aligned with an aperture of the first plurality of apertures. The plasma sources may include a third plate positioned between the first plate and the second plate. The third plate may define a third plurality of apertures.
Claims20
A plasma source comprising:
- a first plate defining a first plurality of apertures arranged in a first set of rows, wherein the first plate comprises a first set of electrodes, each electrode of the first set of electrodes extending along a separate row of the first set of rows;
- a second plate defining a second plurality of apertures arranged in a second set of rows, wherein the second plate comprises a second set of electrodes, each electrode of the second set of electrodes extending along a separate row of the second set of rows, and wherein each aperture of the second plurality of apertures is axially aligned with an aperture of the first plurality of apertures;
- and
- a third plate positioned between the first plate and the second plate, wherein the third plate defines a third plurality of apertures, each aperture of the third plurality of apertures axially aligned with an aperture of the first plurality of apertures and an aperture of the second plurality of apertures.
A semiconductor processing chamber comprising:
- a substrate support configured to support a substrate for processing, and at least partially defining a processing region from below;
- and
- a plasma source positioned within the semiconductor processing chamber, the plasma source comprising:
- a first plate defining a first aperture,
- a first electrode extending across a surface of the first plate and intersecting the first aperture,
- a second plate defining a second aperture, the second aperture coaxial with the first aperture,
- a second electrode extending across a surface of the second plate and intersecting the second aperture, wherein the second electrode extends perpendicular to the first electrode, and
- a third plate positioned between the first plate and the second plate, the third plate defining a third aperture coaxial with the first aperture and the second aperture to form a channel through the plasma source.
A method of semiconductor processing, the method comprising:
- delivering a precursor to a semiconductor processing chamber, the semiconductor processing chamber having a plasma source comprising:
- a first plate defining a first aperture,
- a first electrode extending across a surface of the first plate and intersecting the first aperture,
- a second plate defining a second aperture, the second aperture coaxial with the first aperture,
- a second electrode extending across a surface of the second plate and intersecting the second aperture, wherein the second electrode extends perpendicular to the first electrode,
- a third plate positioned between the first plate and the second plate, the third plate defining a third aperture coaxial with the first aperture and the second aperture to form a channel through the plasma source,
- a first power supply configured to deliver a first voltage along the first electrode, and
- a second power supply configured to deliver a second voltage along the second electrode;
- providing the first voltage along the first electrode;
- and
- forming a plasma of the precursor within the channel through the plasma source.
Dependencies are inferred from the claim text.