Plasma processing apparatus
AssigneeEugene Technology Co., Ltd.
InventorsJeong Hee JO, Yoon Seok CHOI, Zaretskiy SERGEY, Cha Young YOO
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AssigneeEugene Technology Co., Ltd.
InventorsJeong Hee JO, Yoon Seok CHOI, Zaretskiy SERGEY, Cha Young YOO
Estimating the term…
A plasma treatment apparatus according to the present invention includes an induction chamber in which a source gas is introduced to generate plasma therein, a process chamber in which a substrate to be treated is treated by the plasma generated in the induction chamber, an inductively coupled plasma (ICP) antenna disposed outside the induction chamber and configured to form an inductive magnetic field so as to generate plasma from the source gas introduced into the induction chamber, and a high-frequency oscillator configured to apply a RF power to the ICP antenna. The ICP antenna includes a plurality of helical antennas having the same length and center in a radial direction, each of the antennas includes an input terminal connected to the high-frequency oscillator and an output terminal disposed opposite to the input terminal and connected to the ground, and a balanced capacitor is mounted to the output terminal of each of the antennas so as to form a virtual ground at a center in a longitudinal direction of each of the antennas. The plurality of helical antennas are arranged so that input terminals and the output terminals thereof are spaced by the same angle with respect to the center in the radial direction, and the center in the longitudinal direction of each of the plurality of helical antennas is disposed between the output terminals of the plurality of helical antennas.
A plasma treatment method comprising:
A plasma treatment method comprising:
Dependencies are inferred from the claim text.