Inductor and circuit structure and method of manufacturing the same
AssigneeAdvanced Semiconductor Engineering, Inc.
InventorsSyu-Tang LIU, Huang-Hsien CHANG, Yunghsun CHEN
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Abstract
An inductor unit includes a conductive structure, a first magnetic element and an insulating layer. The conductive structure has a bottom conductive layer, a top conductive layer, and a first side conductive layer extending from the bottom conductive layer to the top conductive layer. The first magnetic element is disposed on the bottom conductive layer of the conductive structure. The insulating layer is disposed on the bottom conductive layer of the conductive structure, wherein the insulating layer covers and surrounds the first magnetic element. The circuit structure including the inductor unit and the methods for manufacturing the same are also provided.
Claims21
An inductor unit, comprising:
- a conductive structure having a bottom conductive layer, a top conductive layer, and a first side conductive layer extending from the bottom conductive layer to the top conductive layer;
- a first magnetic element disposed on the bottom conductive layer of the conductive structure;
- and
- an insulating layer disposed on the bottom conductive layer of the conductive structure, wherein the insulating layer covers and surrounds the first magnetic element.
he inductor units of claim 1.
A circuit structure, comprising:
- a capacitor structure;
- a first redistribution layer over the capacitor structure;
- a first inductor structure electrically connected to the first redistribution layer;
- an insulating material enclosing the first redistribution layer, the first inductor unit and the capacitor structure;
- a second redistribution layer over the first inductor and the capacitor structure;
- and
- a first conductive pillar penetrating the insulating material and electrically connecting to the first redistribution layer, the second redistribution layer and the capacitor structure.
A method for manufacturing a circuit structure, comprising:
- forming a capacitor structure;
- forming a first redistribution layer on the capacitor structure;
- forming a first inductor structure on the first redistribution layer;
- and
- forming a second redistribution layer over the first inductor structure.
The method of claim dielectric layer 16, wherein forming the first inductor structure on the first redistribution layer comprises:
- disposing a pre-formed stack of inductor units on the first redistribution layer.
Dependencies are inferred from the claim text.