Method and apparatus to mitigate hot electron read disturbs in 3d nand devices

A system including:

• a three-dimensional non-volatile memory device a superblock, block or subblock including:
• a plurality of decks stacked with respect to one another, each of the decks including a corresponding set of wordlines (WLs) and a corresponding set of interlayer dielectrics interposed between pairs of the corresponding set of WLs;
• and
• a plurality of pillars intersecting the wordlines and defining a plurality of memory cells therewith;
• and
• a controller coupled to the memory device, the controller to:
• implement an erase operation on a deck of the superblock, block or subblock to obtain an erased deck;
• apply a dummy read pulse to one or more wordlines (WLs) of a to-be-read deck of the superblock, block or subblock;
• and
• implement, after application of the dummy read pulse, a read operation on one or more memory cells of the plurality of memory cells to read data from the one or more memory cells, the one or more memory cells corresponding to the one or more WLs.

A method including:

• implementing an erase operation on a deck of a superblock, block or subblock of a three-dimensional (3D) non-volatile memory device to obtain an erased deck;
• applying a dummy read pulse to one or more wordlines (WLs) of a to-be-read deck of the superblock, block or subblock;
• and
• implementing, after application of the dummy read pulse, a read operation on one or more memory cells corresponding to the one or more WLs to read data from the one or more memory cells.

A non-transitory machine readable storage medium having instructions stored thereon, the instructions when executed by a machine to cause the machine to:

• implement an erase operation on a deck of a superblock, block or subblock of a three-dimensional (3D) non-volatile memory device to obtain an erased deck;
• apply a dummy read pulse to one or more wordlines (WLs) of a to-be-read deck of the superblock, block or subblock;
• and
• implement, after application of the dummy read pulse, a read operation on one or more memory cells corresponding to the one or more WLs to read data from the one or more memory cells.