Methods of programming memory device
AssigneeYangtze Memory Technologies Co., Ltd.
InventorsZhipeng Dong, Venkatagirish Nagavarapu, Haibo Li
Life of this patent
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Abstract
A memory device includes a plurality of memory cells arranged in a plurality of rows and a plurality of strings. A method of programming the memory device includes programming a first row of the memory cells. The method also includes, after programing the first row of the memory cells, programming a second row of the memory cells. The second row is adjacent to the first row in a first string direction. The method further includes, after programming the second row of the memory cells, programming a third row of the memory cells. The third row is two rows apart from the second row in a second string direction opposite to the first string direction.
Claims1
A method of programming a memory device, the memory device comprising a plurality of memory cells arranged in a plurality of rows and a plurality of strings, the method comprising:
- programming a first row of the memory cells;
- after programing the first row of the memory cells, programming a second row of the memory cells, the second row being adjacent to the first row in a first string direction;
- and
- after programming the second row of the memory cells, programming a third row of the memory cells, the third row being two rows apart from the second row in a second string direction opposite to the first string direction.
Dependencies are inferred from the claim text.