Memory circuit and method of operating the same

A memory circuit comprising:

• a first current path comprising a first resistance-based memory device;
• a first voltage clamp device configured to generate a first drive voltage at the first current path;
• and
• a bias voltage generator comprising a first buffer and a replica circuit configured to mimic a resistance of at least a portion of the first current path comprising the first resistance-based memory device,
• wherein
• the bias voltage generator is configured to receive a reference voltage and generate a first bias voltage,
• the first buffer is configured to generate a second bias voltage based on the first bias voltage,
• the replica circuit is configured to generate a second drive voltage based on the second bias voltage, and
• the bias voltage generator is configured to adjust the first bias voltage based on a voltage difference between the reference voltage and the second drive voltage.

A memory circuit, comprising:

• a reference stage configured to generate a reference voltage;
• a voltage sensing stage configured to detect a voltage difference between the reference voltage and a first bias voltage;
• a gain stage configured to generate a second bias voltage based on the voltage difference;
• a buffer configured to generate the first bias voltage based on the second bias voltage;
• a first voltage clamp device configured to generate a first drive voltage based on the first bias voltage;
• and
• a first current path comprising a first resistance-based memory device, wherein the first voltage clamp device is configured to apply the first drive voltage to the first current path.