Memory Cells And Methods Of Forming A Capacitor Including Current Leakage Paths Having Different Total Resistances

A method of forming a capacitor, comprising:

• forming a conductive lining in a capacitor opening in insulative-comprising material to comprise a first capacitor electrode of a capacitor being formed in the capacitor opening and forming sacrificial material laterally-inward of the conductive lining;
• vertically recessing the conductive lining and the sacrificial material in the capacitor opening relative to a top surface of the insulative-comprising material immediately-laterally-adjacent the capacitor opening;
• forming a leaker-material lining in the capacitor opening atop the conductive lining;
• after forming the leaker-material lining, removing remaining of the sacrificial material from being laterally-inward of the conductive lining in the capacitor opening;
• after removing the sacrificial material, forming capacitor insulator material in the capacitor opening aside the conductive lining and the leaker-material lining;
• forming conductive material in the capacitor opening to comprise a second capacitor electrode of the capacitor;
• and
• the capacitor comprising an intrinsic current leakage path from one of the first and second capacitor electrodes to the other through the capacitor insulator material, the leaker-material lining forming a parallel current leakage path that is circuit-parallel with the intrinsic current leakage path and of lower total resistance than the intrinsic current leakage path.

A method of forming an array of capacitors, comprising:

• forming a conductive lining in individual capacitor openings in insulative-comprising material in first and second areas of a substrate to comprise first capacitor electrodes of capacitors being formed in the capacitor openings and forming sacrificial material laterally-inward of the conductive linings;
• vertically recessing the conductive linings and the sacrificial material in the capacitor openings in the first and second areas relative to respective top surfaces of the insulative-comprising material immediately-laterally-adjacent the capacitor openings;
• forming a leaker-material lining in the capacitor openings in the first and second areas atop the conductive linings;
• removing the leaker-material linings from the capacitor openings in the second area to leave the leaker-material linings in the capacitor openings in the first area;
• after removing the leaker-material linings from the second area, removing remaining of the sacrificial material from being laterally-inward of the conductive linings in the capacitor openings in the first and second areas;
• after removing the sacrificial material, forming capacitor insulator material in the capacitor openings in the first and second areas aside the conductive linings and the leaker-material linings;
• forming conductive material in the capacitor openings in the first and second areas to comprise second capacitor electrodes of the capacitors;
• and
• the capacitors individually comprising an intrinsic current leakage path from one of the first and second capacitor electrodes to the other through the capacitor insulator material, individual of the leaker-material linings forming a parallel current leakage path that is circuit-parallel with the intrinsic current leakage path and of lower total resistance than the intrinsic current leakage path.