Staircase structures for word line contacts in three-dimensional memory
AssigneeYangtze Memory Technologies Co., Ltd.
InventorQiang TANG
Life of this patent
Estimating the term…
Abstract
Embodiments of three-dimensional (3D) memory devices and methods for forming the 3D memory devices are disclosed. In an example, the 3D memory device includes a film stack having a plurality of conductive and dielectric layer pairs vertically stacked on a substrate. Each conductive and dielectric layer pair includes a dielectric layer and a conductive layer. The 3D memory device also includes a staircase region having a first and a second staircase structure formed in the film stack, where the first and second staircase structures each extends laterally in a first direction and includes the plurality of conductive and dielectric layer pairs. The staircase region further includes a staircase bridge connecting the first and second staircase structures.
Claims20
A three-dimensional (3D) memory device, comprising:
- a film stack, comprising a plurality of conductive and dielectric layer pairs vertically stacked on a substrate, wherein each conductive and dielectric layer pair comprises a dielectric layer and a conductive layer;
- and
- a first staircase region, comprising:
- a first staircase structure formed in the film stack;
- a second staircase structure formed in the film stack, wherein the first and second staircase structures each extends laterally in a first direction and comprises the plurality of conductive and dielectric layer pairs;
- and
- a staircase bridge connecting the first and second staircase structures.
A method for forming a three-dimensional (3D) memory device, comprising:
- disposing an alternating dielectric stack on a substrate, wherein the alternating dielectric stack comprises a plurality of dielectric layer pairs, each dielectric layer pair comprising a first dielectric layer and a second dielectric layer different from the first dielectric layer;
- and
- forming a first dielectric staircase, a second dielectric staircase, and a dielectric bridge in the alternating dielectric stack, wherein the first and second dielectric staircases are connected by the dielectric bridge.
Dependencies are inferred from the claim text.