Memory device for swapping data and operating method thereof

An operating method of a memory device comprising a memory cell array, a row decoder, a control circuit, a read circuit, a write circuit, a first buffer and a second buffer, the method executable by the control circuit and comprising operations of:

• 1) controlling the read circuit to read first data from a first location of the memory cell array identified by a first address;
• 2) controlling the first buffer to store the first data that is read in operation (1) or an error-corrected version of the first data;
• 3) controlling the write circuit to write the first data or the error-corrected version of the first data, which is stored in the first buffer, into a second location of the memory cell array identified by a second address;
• 4) controlling the second buffer to store second data written at the second location of the memory cell array or an error-corrected version of the second data;
• and
• 5) controlling the write circuit to write the second data or the error-corrected version of the second data, which is stored in the second buffer, into the first location of the memory cell array identified by the first address, wherein
• operations (1) through (5) are performed in response to the control circuit receiving one or more commands from a memory controller that is disposed externally to the memory device.