Current sensing device having an integrated electrical shield

A method of manufacturing an integrated sensor device, comprising:

• providing a primary current bar in a base layer, the primary current bar having at least two antiparallel segments;
• providing an insulation layer comprising an insulating film, the insulation layer being arranged above the base layer in a stacking direction;
• providing an electrical shield in a shielding layer, the shielding layer being arranged above the base layer and the insulation layer in the stacking direction, the electrical shield being isolated from the primary current bar by the insulation film, the electric shield including a structured area and a slit that connects the structured area with an outer edge of the shielding layer;
• and
• providing a differential magnetic field sensor in a sensing layer, the sensing layer being arranged above the base layer, the insulation layer and the shielding layer in the stacking direction, the differential magnetic field sensor being arranged on an opposite side of the electrical shield with respect to the primary current bar to detect a magnetic field in the area of the at least two antiparallel segments.

An integrated current sensing device, comprising:

• an approximately U-shaped conductor for conducting a current to be measured;
• an insulation film arranged above the approximately U-shaped conductor;
• an electrical shielding layer arranged above at least part of the insulation film, the electrical shielding layer including a structured area and a slit that connects the structured area with an outer edge of the electric shielding layer;
• and
• detection circuitry for detecting a magnetic field in the area of the approximately U-shaped conductor, the magnetic field being caused by the current to be measured, at least part of the detection circuitry being arranged above the electrical shielding layer.