Silicon carbide wafer and method of fabricating the same
AssigneeGlobalWafers Co., Ltd.
InventorsChing-Shan Lin, Chien-Cheng Liou, Jian-Hsin Lu
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Abstract
A silicon carbide wafer and a method of fabricating the same are provided. In the silicon carbide wafer, a ratio (V:N) of a vanadium concentration to a nitrogen concentration is in a range of 2:1 to 10:1, and a portion of the silicon carbide wafer having a resistivity greater than 1012 Ω·cm accounts for more than 85% of an entire wafer area of the silicon carbide wafer.
Claims12
A silicon carbide wafer, wherein in the silicon carbide wafer, a ratio (V:N) of a vanadium concentration to a nitrogen concentration is in a range of 2:1 to 10:1, and a portion of the silicon carbide wafer having a resistivity greater than 1012 Ω·cm accounts for more than 85% of an entire wafer area of the silicon carbide wafer.
A method of fabricating a silicon carbide wafer, comprising:
- providing a raw material containing a carbon element and a silicon element and a seed crystal located above the raw material in a reactor;
- introducing argon gas and vanadium gas into the reactor;
- heating the reactor and the raw material to form a silicon carbide material on the seed crystal;
- cooling the reactor and the raw material to obtain a silicon carbide ingot;
- and
- cutting the silicon carbide ingot to obtain a plurality of silicon carbide wafers.
Dependencies are inferred from the claim text.