Silicon carbide ingot and method of fabricating the same

A method of fabricating a silicon carbide ingot, comprising:

• providing a raw material containing carbon element and silicon element, and a seed crystal located above the raw material into a reactor;
• introducing argon gas and vanadium gas into the reactor;
• heating the reactor and the raw material, so as to form a silicon carbide crystal on the seed crystal;
• and
• cooling the reactor and the raw material, so as to obtain the silicon carbide ingot, wherein the silicon carbide ingot comprises a seed end and a dome end opposite to the seed end, and the seed end is an end of the silicon carbide ingot close to the seed crystal, and the dome end is an end of the silicon carbide crystal ingot far away from the seed crystal.