Manufacturing method of silicon carbide wafer and semiconductor structure
AssigneeGlobalWafers Co., Ltd.
InventorChing-Shan Lin
Life of this patent
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Abstract
A manufacturing method of a silicon carbide wafer includes the following. A raw material containing carbon and silicon and a seed located above the raw material are provided in a reactor. A nitrogen content in the reactor is reduced, which includes the following. An argon gas is passed into the reactor, where a flow rate of passing the argon gas into the reactor is 1,000 sccm to 5,000 sccm, and a time of passing the argon gas into the reactor is 2 hours to 48 hours. The reactor and the raw material are heated to form a silicon carbide material on the seed. The reactor and the raw material are cooled to obtain a silicon carbide ingot. The silicon carbide ingot is cut to obtain a plurality of silicon carbide wafers. A semiconductor structure is also provided.
Claims13
A manufacturing method of a silicon carbide wafer, comprising:
- providing a raw material containing carbon and silicon and a seed located above the raw material in a reactor;
- reducing a nitrogen content in the reactor, comprising:
- passing an argon gas into the reactor, wherein a flow rate of passing the argon gas into the reactor is 1,000 sccm to 5,000 sccm, and a time of passing the argon gas into the reactor is 2 hours to 48 hours;
- heating the reactor and the raw material to form a silicon carbide material on the seed;
- cooling the reactor and the raw material to obtain a silicon carbide ingot;
- and
- cutting the silicon carbide ingot to obtain a plurality of silicon carbide wafers.
A semiconductor structure, comprising:
- a silicon carbide wafer, wherein a resistivity of the silicon carbide wafer is 0.1 ohm/cm to 10 ohms/cm, and a visible light transmittance of the silicon carbide wafer is greater than 50%.
Dependencies are inferred from the claim text.