Methods for producing a monocrystalline ingot by horizontal magnetic field czochralski
AssigneeGlobalWafers Co., Ltd.
InventorsJaeWoo Ryu, Carissima Marie Hudson, JunHwan Ji, WooJin Yoon
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Abstract
Methods for producing monocrystalline silicon ingots by horizontal magnetic field Czochralski are disclosed. During growth of the neck and/or growth of at least a portion of the crown, a magnetic field is not applied to the neck and/or crown or a relatively weak magnetic field of 1500 gauss or less is applied. A horizontal magnetic field (e.g., greater than 1500 gauss) is applied during growth of the ingot main body.
Claims20
A method for producing a monocrystalline silicon ingot having a neck and a main body suspended from the neck by the horizontal magnetic field Czochralski method, the method comprising:
- contacting a seed crystal with a silicon melt held within a crucible;
- pulling a neck from the silicon melt, wherein a horizontal magnetic field is not applied to the melt while the neck is pulled from the melt;
- and
- pulling an ingot main body from the melt, the main body being suspended from the neck, wherein a horizontal magnetic field is applied to the melt while the ingot main body is pulled from the melt.
A method for producing a monocrystalline silicon ingot having a neck and a main body suspended from the neck by the horizontal magnetic field Czochralski method, the method comprising:
- contacting a seed crystal with a silicon melt held within a crucible;
- pulling a neck from the silicon melt, wherein a horizontal magnetic field is applied to the melt while the neck is pulled from the melt, the horizontal magnetic field being generated at a magnetic flux density of 1500 gauss or less;
- pulling an ingot main body from the melt, the main body being suspended from the neck, wherein a horizontal magnetic field is applied to the melt while the ingot main body is pulled from the melt.
Dependencies are inferred from the claim text.