Precursors And Processes For The Thermal ALD Of Cobalt Metal Thin Films

A method for depositing a metal layer, the method comprising:

• a) contacting a surface of an electrically conductive substrate with a vapor of a metal-containing compound for a first predetermined pulse time to form a modified surface on the electrically conductive substrate, the metal-containing compound being described by formulae 1.1 or 1.2 or oligomers thereof:
• wherein:
• M is a metal atom;
• n is the formal charge of M;
• X1 and X2 are each independently O or N—R4;
• L is a neutral or anionic ligand;
• o is 1, 2, or 3;
• p is an integer such that the overall formal charge of the metal-containing compound is 0;
• R1, R2, R3, and R4 are each independently H, C1-C5 alkyl, perfluorinated C1-C5 alkyl, partially fluorinated C1-C5 alkyl, or —Si(R5)3;
• and
• R5 is H, halo, C1-C5 alkyl, perfluorinated C1-C5 alkyl, or partially fluorinated C1-C5 alkyl;
• and
• b) contacting the modified surface with a vapor of a reducing agent having formula 2 for a second predetermined pulse time to form a metal-containing film on the surface of the electrically conductive substrate, the metal-containing film including the metal atom in a zero oxidation state in an amount greater than 80 mole percent:
• wherein R5 and R6 are each independently H or C1-C5 alkyl and wherein the electrically conductive substrate is at a first predetermined temperature during steps a) and b).