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US 2022/0020875 A1Published application
Semiconductor device
AssigneesHyundai Motor Company, Kia Motors Corporation
InventorJongSeok LEE
Life of this patent
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Abstract
A semiconductor device is provided. The semiconductor may include: a substrate; an N− epitaxial layer disposed on the substrate; P areas positioned on the N− epitaxial layer and spaced apart from each other with a channel therebetween; and N+ areas positioned inside the P areas, wherein the channel includes: a trench area in which the P areas are partially etched so that the N+ areas face each other; and a planar area in which the P areas are not etched to face each other.
Claims5
A semiconductor device comprising:
- a substrate;
- an N− epitaxial layer disposed on the substrate;
- P areas positioned on the N− epitaxial layer and spaced apart from each other with a channel therebetween;
- and
- N+ areas positioned inside the P areas,
- wherein the channel includes:
- a trench area in which the P areas are partially etched so that the N+ areas face each other;
- and
- a planar area in which the P areas are not etched to face each other, wherein the N− epitaxial layer in the trench area and the N− epitaxial layer in the planar area are connected to each other.
6 more elements
Dependencies are inferred from the claim text.