Bypassed gate transistors having improved stability
AssigneeCree, Inc.
InventorsJeremy Fisher, Khaled Fayed, Simon Wood
Life of this patent
Estimating the term…
Abstract
A transistor device includes a plurality of gate fingers that extend in a first direction and are spaced apart from each other in a second direction, each of the gate fingers comprising at least spaced-apart and generally collinear first and second gate finger segments that are electrically connected to each other. The first gate finger segments are separated from the second gate finger segments in the first direction by a gap region that extends in the second direction. A resistor is disposed in the gap region.
Claims25
A transistor device comprising:
- a semiconductor layer structure;
- a source contact on an upper surface of the semiconductor layer structure;
- a drain contact on the upper surface of the semiconductor layer structure;
- a gate finger on the upper surface of the semiconductor layer structure, the gate finger positioned between the source contact and the drain contact;
- a gate jumper that is electrically connected to at least a portion of the gate finger positioned above and over the source contact,
- wherein the source contact extends continuously on the upper surface of the semiconductor layer structure without any gaps that divide the source contact into segments.
(canceled)
9-12. (canceled)
A transistor device comprising:
- a semiconductor layer structure;
- a source contact that extends in a first direction on an upper surface of the semiconductor layer structure;
- a drain contact that extends in the first direction on the upper surface of the semiconductor layer structure;
- a gate finger that extends in the first direction on the upper surface of the semiconductor layer structure, the gate finger positioned between the source contact and the drain contact;
- wherein one of the source contact and the drain contact includes, on the upper surface of the semiconductor layer structure, a first widened portion and a narrowed portion.
22-23. (canceled)
A transistor device comprising:
- a semiconductor layer structure;
- a source contact that extends in a first direction on an upper surface of the semiconductor layer structure;
- a drain contact that extends in the first direction on the upper surface of the semiconductor layer structure;
- a gate finger that extends in the first direction on the upper surface of the semiconductor layer structure, the gate finger positioned between the source contact and the drain contact and comprising a plurality of discontinuous gate finger segments;
- a gate bus;
- a gate jumper that is electrically connected to the gate bus, wherein the gate jumper has a longitudinal axis that extends in the first direction and is positioned above the source contact;
- and
- a gate signal distribution bar that is formed in a same metal layer as the gate jumper, the gate signal distribution bar extending from the gate jumper towards a first of the discontinuous gate finger segments.
29-32. (canceled)
Dependencies are inferred from the claim text.