Monolithic semiconductor device and hybrid semiconductor device

Abstract

A monolithic semiconductor device includes: a substrate; a first nitride semiconductor layer disposed on the substrate; a second nitride semiconductor layer disposed on the first nitride semiconductor layer and having a band gap larger than a band gap of the first nitride semiconductor layer; a first transistor disposed on the substrate and including the first nitride semiconductor layer and the second nitride semiconductor layer, the first transistor being of a high-electron-mobility transistor (HEMT) type for power amplification; and a first bias circuit disposed on the substrate and including a second transistor of the HEMT type disposed outside a propagation path of a radio-frequency signal inputted to the first transistor, the first bias circuit applying bias voltage to a gate of the first transistor.

Dependencies are inferred from the claim text.