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US 2022/0020872 A1Published application
Method of forming a semiconductor device
AssigneeSemiconductor Components Industries, LLC
InventorsHerbert DE VLEESCHOUWER, Jaume ROIG-GUITART, Peter MOENS, Mohammad Shawkat ZAMAN, Olivier TRESCASES
Life of this patent
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Abstract
In an embodiment, a HEMT is formed to have a main transistor having a main active area and a sense transistor having a sense active area. An embodiment may include that the main active area is isolated from the sense active area.
Claims20
A SenseHEMT comprising:
- a GaN transistor having a main transistor and a sense transistor formed on a semiconductor substrate, the main transistor having a main active area and the sense transistor having a sense active area;
- an isolation structure that isolates the sense active area from the main active area;
- a main drain of the main transistor formed within the main active area;
- a sense drain of the sense transistor formed within the sense active area, the sense drain having a second width that is less than the first width;
- a sense gate of the sense transistor formed in the sense active area, the sense gate having a first width;
- a main gate of the main transistor formed in the main active area, the main gate having a second width that is greater than the first width, the main gate connected to the sense gate;
- a sense source of sense transistor formed in the sense active area;
- and
- a main source of the main transistor formed in the main active area wherein one of the main source is connected to the sense source or the main drain is connected to the sense drain.
6 more elements
A method of forming a high electron mobility transistor (HEMT) comprising:
- forming a GaN transistor on a semiconductor substrate including forming a main portion of the GaN transistor in a main active area and forming a sense portion of the GaN transistor in a sense active area;
- forming an isolation region separating the main active area from the sense active area;
- forming a main gate in the main active area;
- forming a main drain region in the main active area including forming a main drain 2DEG underlying the main drain region and extending across the semiconductor substrate toward a point underlying a first edge of the main gate;
- forming a main source region in the main active area including forming a main source 2DEG underlying the main source region and extending across the semiconductor substrate toward another point underlying a second edge of the main gate;
- forming a sense gate within the sense active area;
- and
- forming a sense drain region and a sense source region within the sense active area including forming a sense 2DEG within the sense active area and extending through the semiconductor substrate from adjacent the sense gate to underlie one of the sense source region or the sense drain region.
5 more elements
A high electron mobility transistor (HEMT) comprising:
- a main active area on a first portion of a semiconductor substrate;
- a main source, a main gate, and a main drain formed in the main active area;
- a sense active area on a second portion of the semiconductor substrate;
- and
- a sense gate formed in the sense active area wherein the sense active area overlaps a portion of the main active area and wherein one of the main drain or the main source receives current through a 2DEG that is controlled by the sense gate.
2 more elements
Dependencies are inferred from the claim text.