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US 2022/0020871 A1Published application
Stacked buffer in transistors
AssigneeIndian Institute of Science
InventorsSrinivasan RAGHAVAN, Navakanta BHAT, Rohith SOMAN
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Abstract
The present subject matter provides a High Mobility Electron Transistor (HEMT) comprising: a substrate, a nucleation layer provided on the substrate, a channel layer, and a buffer layer formed between the nucleation layer and the channel layer. The buffer layer comprises a vertical stack of p-n junctions. Each p-n junction of the vertical stack of p-n junctions comprises an n-type layer provided on a p-type layer. The n-type layer and the p-type layer are parallel to the substrate.
Claims13
A High Mobility Electron Transistor (HEMT) comprising:
- a substrate;
- a nucleation layer provided on the substrate;
- a channel layer;
- and
- a buffer layer formed between the nucleation layer and the channel layer, wherein the buffer layer comprises a vertical stack of p-n junctions to reduce leakage current in the buffer layer, wherein each p-n junction of the vertical stack of p-n junctions comprises:
- an n-type layer;
- and
- a p-type layer, wherein the n-type layer is provided on the p-type layer, wherein the n-type layer and the p-type layer are parallel to the substrate.
5 more elements
Dependencies are inferred from the claim text.