Bipolar transistor and method for forming the same
AssigneeWin Semiconductors Corp.
InventorsChien-Rong YU, Shu-Hsiao TSAI, Jui-Pin CHIU
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Abstract
A bipolar transistor includes a substrate, a sub-collector layer, a collector layer, a base layer, an emitter layer, a passivation layer, and a collector electrode. The sub-collector layer is formed over the substrate. The collector layer is formed over the sub-collector layer. The base layer is formed over the collector layer. The emitter layer is formed over the base layer. The passivation layer is formed over the substrate and covering a sidewall of the collector layer. The collector electrode is connected to the sub-collector layer through an opening in the passivation layer. The opening exposes at least a portion of the sub-collector layer.
Claims20
A bipolar transistor, comprising:
- a substrate;
- a sub-collector layer formed over the substrate;
- a collector layer formed over the sub-collector layer;
- a base layer formed over the collector layer;
- an emitter layer formed over the base layer;
- a passivation layer formed over the substrate and covering a sidewall of the collector layer;
- and
- a collector electrode connected to the sub-collector layer through an opening in the passivation layer, wherein the opening exposes at least a portion of the sub-collector layer.
A bipolar transistor, comprising:
- a sub-collector layer formed on a substrate;
- a collector layer formed on the sub-collector layer;
- a base layer formed on the collector layer;
- an emitter layer formed on the base layer;
- a collector electrode formed on a sidewall of the sub-collector layer;
- and
- a passivation layer fully covering a sidewall of the collector layer.
A method for forming a bipolar transistor, comprising:
- forming an upper sub-collector layer over a substrate;
- forming a collector layer over the upper sub-collector layer;
- forming a base layer over the collector layer;
- forming an emitter layer over the base layer;
- depositing a passivation layer covering the upper sub-collector layer, the base layer, and the emitter layer;
- patterning the passivation layer to form an opening exposing at least a portion of the upper sub-collector layer;
- and
- forming a collector electrode in the opening in the passivation layer, wherein the collector electrode is connected to the upper sub-collector layer.
Dependencies are inferred from the claim text.