Multilayer Masking Layer and Method of Forming Same
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsWen-Ju Chen, Chung-Ting Ko, Ya-Lan Chang, Ting-Gang Chen, Tai-Chun Huang, Chi On Chui
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Abstract
A method includes forming a semiconductor layer over a substrate; etching a portion of the semiconductor layer to form a first recess and a second recess; forming a first masking layer over the semiconductor layer; performing a first thermal treatment on the first masking layer, the first thermal treatment densifying the first masking layer; etching the first masking layer to expose the first recess; forming a first semiconductor material in the first recess; and removing the first masking layer.
Claims20
A method, comprising:
- forming a semiconductor layer over a substrate;
- etching a portion of the semiconductor layer to form a first recess and a second recess;
- forming a first-type masking layer over the semiconductor layer, the forming the first-type masking layer comprising:
- forming a first masking layer over the semiconductor layer;
- and
- forming a second masking layer, wherein after forming the second masking layer, the second masking layer is located over a portion of the first masking layer;
- etching the first-type masking layer to expose the semiconductor layer;
- forming a first semiconductor material in the first recess;
- and
- removing the first-type masking layer.
A method, comprising:
- forming a semiconductor layer over a first substrate;
- etching the semiconductor layer to form a first recess in a first region and a second recess in a second region;
- depositing a first portion of a first masking layer over the first region and the second region;
- forming a second masking layer over the first portion of the first masking layer;
- removing the first masking layer and the second masking layer from the second region;
- forming a first epitaxial source/drain region in the second recess;
- removing a remainder of the first masking layer and a remainder of the second masking layer;
- depositing a first portion of a third masking layer over the first region and the second region;
- forming a fourth masking layer over the first portion of the third masking layer;
- removing the third masking layer and the fourth masking layer from the first region;
- forming a second epitaxial source/drain region in the first recess;
- removing a remainder of the third masking layer and a remainder of the fourth masking layer;
- and
- forming a gate structure over the semiconductor layer.
A method, comprising:
- depositing a first masking layer over a substrate, wherein the first masking layer has a first thickness;
- forming a second masking layer over the first masking layer, after the forming the second masking layer, the first masking layer has a second thickness different from the first thickness, and wherein the second masking layer has a third thickness;
- etching the first masking layer and the second masking layer to expose a portion of the substrate;
- growing a first semiconductor material over the second masking layer and a second semiconductor material over the portion of the substrate;
- and
- etching to remove the first masking layer and the second masking layer.
Dependencies are inferred from the claim text.