Manufacture method of lateral double-diffused transistor

A manufacture method of a lateral double-diffused transistor, comprising:

• forming a drift region with a second doping type in a substrate with a first doping type;
• forming a gate structure on the substrate, wherein the gate structure defines a source region and a drain region which are separated from each other in the drift region, and the gate structure comprises a gate oxide layer and a gate conductor layer which are successively stacked on the substrate;
• forming a first doped region with the first doping type in the source region, wherein the first doped region is surrounded by the drift region;
• forming a first barrier layer with a first opening on the source region, the first barrier layer is in connect with a sidewall of the gate structure;
• forming a first implantation region in the source region through self-aligned implantation on the basis of the first opening of the first barrier layer;
• and
• forming a second implantation region and a third implantation region in the source region, the second implantation region and the third implantation region are respectively adjacent to the first implantation region on both sides of the first implantation region.