Carbon-free laminated hafnium oxide/zirconium oxide films for ferroelectric memories
AssigneeEntegris, Inc.
InventorsJun-Fei ZHENG, Thomas H. BAUM
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Abstract
Provided are carbon-free (i.e., less than about 0.1 atomic percentage of carbon) Zr doped HfO2 films, where Zr can be up to the same level of Hf in terms of atomic percentage (i.e., 1% to 60%). The Zr doping can be achieved also by nanometer m laminated ZrO2 and HfO2 films useful in ferroelectric memories (FeRAM). The laminated films are comprised of about 5 to 10 layers of HfO2 and ZrO2 (i.e., alternating) films, each of which for example can be a thickness of about 1 to about 2 nm, wherein the laminated films are a total of about 5 to 10 nm in thickness.
Claims18
A hafnium oxide film having doped therein about 1 to about 60 atomic percentage of zirconium oxide, based on the total atomic percentage of the film, wherein the film contains less than about 0.1 atomic percentage of carbon, and less than about 0.1 atomic percentage of halogen.
A laminate film comprising alternating films of hafnium oxide and zirconium oxide, wherein said laminate film has a thickness of about 5 to about 10 nm in thickness, and wherein said laminate film has less than about 0.1 atomic percentage of carbon.
A method of using HfCl4, HfBr4, or HfI4 to deposit hafnium oxide film on a substrate, said film having less than about 0.1 atomic percentage of carbon, which comprises alternately exposing a substrate to (i) HfCl4, HfBr4, or HfI4 and (ii) an oxidizing gas, under vapor deposition conditions in a reaction zone.
A method of using ZrCl4, ZrBr4, or ZrI4 to deposit zirconium oxide film on a substrate, said film having less than about 0.1 atomic percentage of carbon, which comprises alternately exposing a substrate to (i) ZrCl4, ZrBr4, or ZrI4 and (ii) an oxidizing gas, under vapor deposition conditions in a reaction zone.
Dependencies are inferred from the claim text.