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US 2022/0020856 A1Published application
3d memory device including source line structure comprising composite material
AssigneeMacronix International Co., Ltd.
InventorsTing-Feng LIAO, Sheng-Hong CHEN, Kuang-Wen LIU
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Abstract
A semiconductor structure and a method for manufacturing the same are provided. The semiconductor structure includes a source line structure. The source line structure includes a composite material formed in a trench. The composite material includes an oxide portion and a metal portion.
Claims20
A semiconductor structure, comprising:
- a source line structure comprising a composite material formed in a trench;
- and
- a barrier element,
- wherein the composite material comprising:
- an oxide portion;
- and
- a metal portion,
- wherein the barrier element surrounds the metal portion and the oxide portion, the barrier element is electrically connected to the metal portion.
5 more elements
(canceled)
A method for manufacturing a semiconductor structure, comprising:
- forming a trench in a stack structure;
- forming a composite material in the trench to form a source line structure, comprising:
- forming an oxide portion in the trench;
- and
- forming a metal portion in the trench;
- and
- forming a barrier element between a sidewall of the trench and the composite material, wherein the barrier element surrounds the metal portion and the oxide portion, the barrier element is electrically connected to the metal portion.
4 more elements
(canceled)
Dependencies are inferred from the claim text.