Semiconductor device, semiconductor image sensor, and method of manufacturing the same

A semiconductor image sensor, comprising:

• an array of pixel sensors, wherein the array of pixel sensors comprises a first pixel sensor and a second pixel sensor, and the first pixel sensor comprises:
• a first type of light sensing unit;
• and
• a second type of light sensing unit, wherein the first type of light sensing unit and the second type of light sensing unit are arranged in a sub-array, wherein
• the first type of light sensing unit is operable to receive less radiation than the second type of light sensing unit, and
• at least a portion of the first type of light sensing unit is adjacent to the second pixel sensor.

A method of manufacturing a semiconductor device, comprising:

• disposing a plurality of a first type of light sensing units on a substrate;
• disposing a plurality of a second type of light sensing units arranged on the substrate, wherein each of the plurality of the first type of light sensing units is operable to receive less radiation compared to each of the plurality of the second type of light sensing units, and disposing the plurality of the second type of light sensing units comprises disposing at least one of the plurality of the second type of light sensing units adjacent to a portion of at least one of the plurality of the first type of light sensing units;
• disposing a first isolation structure between one of the plurality of the first type of light sensing units and one of the plurality of the second type of light sensing units;
• disposing a second isolation structure between the adjacent first type of light sensing units of the plurality of the first type of light sensing units;
• and
• disposing a reflective layer above the plurality of the first type of light sensing units.