Photodetector and method for manufacturing photodetector
AssigneeHamamatsu Photonics K.K.
InventorHironori SONOBE
Life of this patent
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Abstract
A light detection device includes a semiconductor substrate. The semiconductor substrate forms an APD and a temperature compensation diode so as to be spaced apart from each other when viewed from a direction perpendicular to a main surface. The semiconductor substrate includes a peripheral carrier absorbing portion surrounding the APD when viewed from the direction perpendicular to the first main surface and configured to absorb carriers located at the periphery. A part of the peripheral carrier absorbing portion is located between the APD and the temperature compensation diode when viewed from the direction perpendicular to the main surface.
Claims12
A light detection device, comprising:
- a semiconductor substrate that has a first main surface and a second main surface facing each other and forms an avalanche photodiode and a temperature compensation diode so as to be spaced apart from each other when viewed from a direction perpendicular to the first main surface,
- wherein the semiconductor substrate includes a peripheral carrier absorbing portion surrounding the avalanche photodiode when viewed from the direction perpendicular to the first main surface and configured to absorb carriers located at a periphery,
- a part of the peripheral carrier absorbing portion is located between the avalanche photodiode and the temperature compensation diode when viewed from the direction perpendicular to the first main surface, and
- a voltage corresponding to a breakdown voltage applied to the temperature compensation diode is applied to the avalanche photodiode as a bias voltage to provide temperature compensation for a multiplication factor of the avalanche photodiode.
A light detection device, comprising:
- a semiconductor substrate having a first main surface and a second main surface facing each other,
- wherein the semiconductor substrate includes:
- a first avalanche photodiode having a light incidence surface on a side of the first main surface;
- a second avalanche photodiode that is spaced apart from the first avalanche photodiode when viewed from a direction perpendicular to the first main surface and is shielded from light;
- and
- a peripheral carrier absorbing portion surrounding the first avalanche photodiode when viewed from the direction perpendicular to the first main surface and configured to absorb carriers located at a periphery, and
- a part of the peripheral carrier absorbing portion is located between the first avalanche photodiode and the second avalanche photodiode when viewed from the direction perpendicular to the first main surface.
Dependencies are inferred from the claim text.