Thin film transistor and method of manufacturing the same, display substrate, and display device

A thin film transistor, comprising:

• a base;
• a first electrode disposed on the base;
• an active pattern disposed on the first electrode, the active pattern including a first semiconductor pattern, a second semiconductor pattern and a third semiconductor pattern that are sequentially stacked in a thickness direction of the base, a material of the second semiconductor pattern including a semiconductor material, a material of one of the first semiconductor pattern and the third semiconductor pattern including the semiconductor material and N-type doped ions, and a material of another of the first semiconductor pattern and the third semiconductor pattern including the semiconductor material and P-type doped ions, the first semiconductor pattern being in contact with the first electrode;
• a gate insulating layer disposed on the active pattern, at least one first via being provided in the gate insulating layer;
• a gate disposed on the gate insulating layer, an orthogonal projection of the gate on the base being non-overlapping with an orthogonal projection of the active pattern on the base, a distance from a surface of the gate proximate to the base to an upper surface of the base being less than or equal to a distance from a surface of the second semiconductor pattern proximate to the base to the upper surface of the base, a distance from a surface of the gate away from the base to the upper surface of the base being greater than or equal to a distance from a surface of the second semiconductor pattern away from the base to the upper surface of the base, the upper surface of the base being a surface of the base proximate to the first electrode;
• and
• a second electrode disposed on the gate insulating layer, the second electrode being in contact with the third semiconductor pattern through the at least one first via.