Three-dimensional ferroelectric random access memory devices and methods of forming

A method of forming a ferroelectric random access memory (FeRAM) device, the method comprising:

• forming a layer stack over a substrate, wherein the layer stack comprises alternating layers of a first dielectric material and a word line (WL) material;
• forming first trenches extending vertically through the layer stack;
• filling the first trenches, wherein filling the first trenches comprises forming, in the first trenches, a ferroelectric material, a channel material over the ferroelectric material, and a second dielectric material over the channel material;
• after filling the first trenches, forming second trenches extending vertically through the layer stack, the second trenches being interleaved with the first trenches;
• and
• filling the second trenches, wherein filling the second trenches comprises forming, in the second trenches, the ferroelectric material, the channel material over the ferroelectric material, and the second dielectric material over the channel material.

A ferroelectric random access memory device comprising:

• a layer stack over a substrate, the layer stack comprising alternating layers of a first dielectric material and a word line (WL) material;
• a dielectric layer embedded in the layer stack and extending from an upper surface of the layer stack distal to the substrate to a lower surface of the layer stack facing the substrate;
• a ferroelectric film between the dielectric layer and the layer stack, the ferroelectric film disposed on opposing sides of the dielectric layer;
• a channel layer between the ferroelectric film and the dielectric layer;
• a capping layer between the channel layer and the dielectric layer, wherein the capping layer is a dielectric material having a first dielectric constant higher than a second dielectric constant of the ferroelectric film;
• and
• source lines (SLs) and bit lines (BLs) embedded at least partially in the dielectric layer and extending through the layer stack.