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US 2022/0020773 A1Published application
Semiconductor device and manufacturing method of semiconductor device
AssigneeSK hynix Inc.
InventorsKun Young LEE, Changhan KIM, Sung Hyun YOON
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Abstract
A semiconductor device includes a stacked structure including conductive layers and insulating layers stacked alternately with each other, a channel layer passing through the stacked structure, a ferroelectric layer surrounding a sidewall of the channel layer, a first dielectric layer surrounding a sidewall of the ferroelectric layer, and sacrificial patterns interposed between the first dielectric layer and the insulating layers and including a material with a higher dielectric constant than the first dielectric layer.
Claims11
A semiconductor device, comprising:
- a stacked structure with conductive layers and insulating layers that are stacked alternately with each other;
- a channel layer passing through the stacked structure;
- a ferroelectric layer surrounding a sidewall of the channel layer;
- a first dielectric layer surrounding a sidewall of the ferroelectric layer;
- and
- sacrificial patterns interposed between the first dielectric layer and the insulating layers, the sacrificial patterns including a material with a higher dielectric constant than the first dielectric layer.
3 more elements
Dependencies are inferred from the claim text.