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US 2022/0020772 A1Published application
Semiconductor device and manufacturing method of the semiconductor device
AssigneeSK hynix Inc.
InventorsKun Young LEE, Changhan KIM, Sung Hyun YOON
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Abstract
A semiconductor device includes a stacked structure including conductive layers and gaps respectively interposed between the conductive layers, a channel layer passing through the stacked structure, a ferroelectric layer surrounding a sidewall of the channel layer, and first dielectric patterns interposed between the ferroelectric layer and the conductive layers, respectively. The gaps extending between the first dielectric patterns.
Claims15
A semiconductor device, comprising:
- a stacked structure including conductive layers and gaps respectively interposed between the conductive layers;
- a channel layer passing through the stacked structure;
- a ferroelectric layer surrounding a sidewall of the channel layer;
- and
- first dielectric patterns interposed between the ferroelectric layer and the conductive layers, respectively,
- wherein the gaps extend between the first dielectric patterns.
3 more elements
Dependencies are inferred from the claim text.