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US 2022/0020770 A1Published application
Three-Dimensional Memory Device and Method
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsFeng-Cheng Yang, Meng-Han Lin, Han-Jong Chia, Sheng-Chen Wang, Chung-Te Lin
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Abstract
A semiconductor device and method of manufacture are provided. In embodiments a memory array is formed by manufacturing portions of a word line during different and separate processes, thereby allowing the portions formed first to act as a structural support during later processes that would otherwise cause undesired damage to the structures.
Claims20
A method of manufacturing a semiconductor device, the method comprising:
- etching a first trench in a multilayer stack, the multilayer stack comprising alternating dielectric layers and sacrificial layers;
- depositing a first conductive material within the first trench;
- filling a remainder of the first trench with a first dielectric material;
- after the filling the remainder of the first trench, etching a second trench in the multilayer stack;
- depositing a second conductive material within the second trench;
- filling a remainder of the second trench with a second dielectric material;
- etching the first conductive material and the second conductive material;
- and
- after the etching the first conductive material and the second conductive material, depositing a channel material into the first trench.
6 more elements
A method of manufacturing a semiconductor device, the method comprising:
- forming an alternating stack of first dielectric materials and sacrificial materials;
- forming a first portion of a first word line within the alternating stack, the forming the first portion of a first word line comprising:
- etching a first trench in the alternating stack;
- forming first recesses by recessing first portions of the sacrificial material exposed within the first trench;
- depositing a first conductive material into the first recesses;
- and
- depositing a second dielectric material to fill a remainder of the first trench;
- and
- forming a second portion of the first word line within the alternating stack, the forming the second portion of the first word line comprising:
- etching a second trench in the alternating stack;
- forming second recesses by removing a second portion of the sacrificial material exposed within the second trench;
- depositing a second conductive material into the second recesses;
- and
- depositing a third dielectric material to fill a remainder of the second trench.
11 more elements
A semiconductor device comprising:
- a ferroelectric material extending away from a substrate;
- a channel material located on a first side of the ferroelectric material;
- a first dielectric material extending away from a second side of the ferroelectric material opposite the first side;
- a second dielectric material extending away from the second side of the ferroelectric material;
- a first conductive material extending away from the second side of the ferroelectric material between the first dielectric material and the second dielectric material, the first conductive material comprising a first bulk material and a first glue layer;
- and
- a second conductive material extending away from the first conductive material between the first dielectric material and the second dielectric material, the second conductive material comprising a second bulk material and a second glue layer, the second glue layer being in physical contact with the first glue layer.
4 more elements
Dependencies are inferred from the claim text.