Semiconductor memory device and method of fabricating the same

A semiconductor memory device comprising:

• a substrate;
• a stacked structure on the substrate, the stacked structure including a plurality of conductive lines stacked on the substrate;
• and
• a vertical structure penetrating the stacked structure, the vertical structure including a vertical insulating pattern and a channel film extending along sidewalls of the vertical insulating pattern,
• the vertical insulating pattern includes a diffused metal, and
• the channel film includes a metal silicide including the diffused metal.

A semiconductor memory device comprising:

• a substrate;
• a peripheral logic structure on the substrate and including a peripheral circuit;
• a horizontal conductive substrate extending along an upper surface of the peripheral logic structure;
• a stacked structure on the horizontal conductive substrate, the stacked structure including a plurality of conductive lines stacked on the horizontal conductive substrate;
• and
• a vertical structure penetrating the stacked structure, the vertical structure including a memory cell insulating film, a vertical insulating pattern, and a channel film between the memory cell insulating film and the vertical insulating pattern,
• the vertical insulating pattern including an inner region and an outer region,
• the outer region of the vertical insulating pattern being between the channel film and the inner region of the vertical insulating pattern,
• the outer region of the vertical insulating pattern including a diffused metal, and
• the channel film including the diffused metal.