Semiconductor storage device and manufacturing method of the same

A manufacturing method of a semiconductor storage device, the manufacturing method comprising:

• forming a first stacked body in which a plurality of electrically conductive layers and a plurality of sacrificial layers are stacked alternately one on another, on a predetermined electrically conductive film;
• forming a first supporting post that penetrates locally through the first stacked body to an upper surface of the predetermined electrically conductive film;
• forming a second stacked body in which a plurality of electrically conductive layers and a plurality of sacrificial layers are stacked alternately one on another, on the first stacked body and the first supporting post, thereby to form a stacked body including the first stacked body and the second stacked body;
• forming a first pillar portion that penetrates through the stacked body in a stacking direction thereof;
• forming a slit that penetrate through the stacked body in the stacking direction and divide the stacked body into a plurality of blocks;
• replacing the plurality of sacrificial layers with a plurality of electrically conductive layers, respectively;
• and
• filling the slit with an insulating film and an electrically conductive portion.