Method for manufacturing a capacitor
AssigneeNanya Technology Corporation
InventorsJen-I LAI, Chun-Heng WU
Life of this patent
Estimating the term…
Abstract
A method for manufacturing a capacitor includes: providing a substrate and a multilayer structure; forming a recess in the multilayer structure; forming a first electrode layer on a surface of the recess; performing a selective etching treatment to remove the first and second stack material layers; performing a selective vapor phase etching treatment to the first electrode layer to form a smaller thickness of the first electrode layer; and forming a dielectric layer and a second electrode layer in which the dielectric layer is between the first and second electrode layer.
Claims18
A method for manufacturing a capacitor, comprising:
- providing a substrate and a multilayer structure, wherein the multilayer structure comprises a first supporting layer disposed on the substrate, a first stack material layer on the first supporting layer, a second supporting layer on the first stack material layer, a second stack material layer on the second supporting layer, and a third supporting layer on the second stack material layer;
- forming a recess in the multilayer structure;
- forming a first electrode layer on a surface of the recess;
- performing a selective etching treatment to remove the first and second stack material layers;
- performing a selective vapor phase etching treatment to the first electrode layer to form a smaller thickness of the first electrode layer;
- and
- forming a dielectric layer and a second electrode layer, wherein the dielectric layer is between the first and second electrode layers.
Dependencies are inferred from the claim text.