Semiconductor structure and method of manufacturing same

A method of manufacturing a semiconductor structure, comprising:

• providing a substrate;
• forming a bitline contact hole located in the substrate, and forming a non-metal conductive layer to cover a surface of the substrate and fill the bitline contact hole, the non-metal conductive layer having a first opening formed therein, the first opening aligned with the bitline contact hole;
• forming a metal conductive layer to cover a surface of the non-metal conductive layer;
• forming an insulation layer to cover a surface of the metal conductive layer;
• and
• etching the insulation layer, the metal conductive layer, and the non-metal conductive layer to form a bitline structure;
• wherein the metal conductive layer and the non-metal conductive layer collectively form a bitline, and the bitline located in the bitline contact hole has a width not less than that of the bitline located outside of the bitline contact hole.