High voltage extended drain mosfet (edmos) devices in a high-k metal gate (hkmg)
AssigneeGlobalFoundries U.S. Inc.
InventorsThorsten E. KAMMLER, Peter BAARS
Life of this patent
Estimating the term…
Abstract
The present disclosure relates to semiconductor devices, and more particularly, to high voltage extended drain MOSFET (EDMOS) devices in a high-k metal gate (HKMG) and methods of manufacture. A structure of the present disclosure includes a plurality of extended drain MOSFET (EDMOS) devices on a high voltage well with a split-gate dielectric material including a first gate dielectric material and a second gate dielectric material, the second gate dielectric material including a thinner thickness than the first gate dielectric material, and a high-k dielectric material on the split-gate dielectric material.
Claims20
A structure, comprising:
- a plurality of extended drain MOSFET (EDMOS) devices on a high voltage well with a split-gate dielectric material comprising a first gate dielectric material and a second gate dielectric material, the second gate dielectric material comprising a thinner thickness than the first gate dielectric material;
- and
- a high-k dielectric material on the split-gate dielectric material.
A structure, comprising:
- a n-type extended drain MOSFET (n-EDMOS) device in an integrated circuit which includes a high-k dielectric material, a high voltage gate oxide, and another gate oxide;
- a p-type extended drain MOSFET (p-EDMOS) device in the integrated circuit which includes the high-k dielectric material, the high voltage gate oxide, and the another gate oxide;
- a plurality of high-k metal gate (HKMG) platform devices with the high-k dielectric material, the another gate oxide, and a channel material in the integrated circuit;
- and
- a stepped feature between the high voltage gate oxide and the another gate oxide.
A method, comprising:
- forming a high voltage well in a semiconductor material;
- forming extended drain MOSFET (EDMOS) devices on the high voltage well with a split-gate oxide comprising a first gate oxide and a second gate oxide which has a thinner thickness than the first gate oxide;
- and
- forming high-k metal gate (HKMG) platform devices with a high-k dielectric material and at least one channel comprising silicon germanium (SiGe) comprising at least one of a thin oxide and a thick oxide in complementary metal-oxide-semiconductor (CMOS) field effect transistors.
Dependencies are inferred from the claim text.