Microelectronic devices, related electronic systems, and methods of forming microelectronic devices

A method of forming a microelectronic device, the method comprising:

• forming a first microelectronic device structure, comprising:
• a first control logic region comprising first control logic devices including at least one word line driver;
• and
• a memory array region vertically neighboring the first control logic region, the memory array region comprising:
• a stack structure comprising vertically alternating conductive structures and insulative structures;
• and
• vertically extending strings of memory cells extending through the stack structure;
• and
• forming a second microelectronic device structure comprising a second control logic region comprising second control logic devices including at least one page buffer;
• and
• attaching the first microelectronic device structure to the second microelectronic device structure.

A microelectronic device, comprising:

• a memory array region comprising:
• a stack structure comprising a vertically alternating sequence of conductive structures and insulative structures;
• and
• vertically extending strings of memory cells within the stack structure;
• a first control logic region comprising at least one word line driver overlying the memory array region;
• and
• a second control logic region comprising at least one page buffer underlying the memory array region, the at least one page buffer configured to operate at lower voltages than the at least one word line driver.

A method of forming a microelectronic device, the method comprising:

• forming a first microelectronic device structure comprising:
• a first semiconductive base structure;
• a first control logic region comprising high voltage CMOS circuitry comprising at least one word line driver overlying the first semiconductive base structure;
• and
• a memory array region overlying the first semiconductive base structure and comprising:
• a stack structure comprising vertically alternating conductive structures and insulative structures;
• and
• vertically extending strings of memory cells within the stack structure;
• forming a second microelectronic device structure comprising:
• a second semiconductive base structure;
• and
• a second control logic region overlying the second semiconductive base structure and comprising low voltage CMOS circuitry comprising at least one page buffer;
• and
• attaching the first microelectronic device structure to the second microelectronic device structure.

An electronic system, comprising:

• an input device;
• an output device;
• a processor device operably coupled to the input device and the output device;
• and
• a memory device operably coupled to the processor device and comprising:
• a stack structure comprising tiers each comprising a conductive structure and an insulative structure vertically neighboring the conductive structure;
• vertically extending strings of memory cells within the stack structure;
• a first control logic region comprising CMOS circuitry vertically overlying the stack structure and comprising at least one word line driver;
• and
• a second control logic region comprising additional CMOS circuitry vertically underlying the stack structure and comprising page buffers, the page buffers having relatively lower operational voltage requirements than the at least one word line driver.