Methods for bonding semiconductor structures and semiconductor devices thereof
AssigneeYangtze Memory Technologies Co., Ltd.
InventorsDi Wang, Zhiliang Xia
Life of this patent
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Abstract
Embodiments of semiconductor devices and fabrication methods thereof are disclosed. In an example, a method for forming a semiconductor device is provided. The method includes the following operations. In a first semiconductor structure, a first bonding layer is formed having a first dielectric layer and a plurality of protruding contact structures. In a second semiconductor structure, a second bonding layer is formed having a second dielectric layer and a plurality of recess contact structures. The plurality of protruding contact structures are bonded with the plurality of recess contact structures such that each of the plurality of protruding contacts is in contact with a respective recess contact structure.
Claims20
A method for forming a semiconductor device, comprising:
- forming, in a first semiconductor structure, a first bonding layer comprising a first dielectric layer and a plurality of protruding contact structures;
- forming, in a second semiconductor structure, a second bonding layer comprising a second dielectric layer and a plurality of recess contact structures;
- and
- bonding the plurality of protruding contact structures with the plurality of recess contact structures such that each of the plurality of protruding contacts is in contact with a respective recess contact structure.
A method for forming a semiconductor device, comprising:
- forming, in a first semiconductor structure, a first bonding layer comprising a first dielectric layer, a plurality of first protruding contact structures, and a plurality of first recess contact structures;
- forming, in a second semiconductor structure, a second bonding layer comprising a second dielectric layer, a plurality of second recess contact structures, and a plurality of second protruding contact structures;
- and
- bonding (i) the plurality of first protruding contact structures with the plurality of second recess contact structures, and (ii) the plurality of first recess contact structures with the plurality of second protruding contact structures such that each of the plurality of first protruding contacts is in contact with a respective second recess contact structure and each of the plurality of first recess contact structures is in contact with a respective second protruding contact structure.
A semiconductor device, comprising:
- a first semiconductor structure comprising a first bonding layer comprising a first dielectric layer and a first portion of a contact structure in the first dielectric layer;
- a second semiconductor structure comprising a second bonding layer comprising a second dielectric layer and a second portion of the contact structure in the second dielectric layer;
- and
- a bonding interface between the first semiconductor structure and the second semiconductor structure, wherein
- the first and second portions of the contact structure are in contact with each other,
- a first portion of the bonding interface extends outside the contact structure and between the first and second dielectric layers;
- and
- a second portion of the bonding interface extends inside the contact structure and is non-coplanar with the first portion of the bonding interface.
Dependencies are inferred from the claim text.